150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Simulating the Avalanche Behavior of Trench Power MOSFETs

The avalanche behavior of a new Trench Power MOSFET was investigated by means of measurement and electro-thermal simulation. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects are proposed. They are in good agreement with measured results. Furthermore, t...

Technology for Controlling Trench Shape in SiC Power MOSFETs

As the worldwide consumption of energy is increases and the global environment steadily deteriorates, society must find more efficient ways to utilize energy in order to achieve sustainable advances. Accordingly, the field of power electronics is of vital importance, and huge advances in power semiconductor devices are anticipated. Power semiconductor devices that use silicon (Si) are said to b...

Compact Model for Multiple-Gate SOI MOSFETs

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is ...

Light Emission Analysis of Trench Gate Oxides of Power Devices

This paper describes the analysis results of the trench oxide of power devices by means of light emission analysis. Localized electron injection was observed at the upper corners of the trench edges. In addition, it was found that the electron injection into the edge of trench oxide was consistently larger than that into the center of the trench oxide during the electrical stressing. From these...

High temperature pulsed-gate robustness testing of SiC power MOSFETs